A problem is when cavity indoor become a vacuum, chamber wall of pollutants in the cavity interior leaks out (out-gassing), the condition is called "pseudo leak" (virtual leak), the air leakage and the outside world to the leak is true in the system is different. In the cavity pressure to reduce indoor and pollutants may enter deposition in the film, the problem can be in wafer by ChengQi clip with tiny negative bias on (bias). This negative bias in wafer surface will produce ions, SKF bearing can will leak out of the pollution discharge pseudo atoms in the growing film by the bodies. The dc electric dipole type 2 extremely splash plating is mainly used in the sedimentary metal.

Will target materials and radio frequency generator connected with the negative can be improved plating, because so even if target material also can be in close to not conductor target materials gas near ionization. Using rf splash splashing plating a non-conductor of electricity materials (dielectric body) is necessary, but it may be used to splash plating conductor. The rf method in use to clean the wafer bias surface. Rf bias provides will be exposed to the wafer surface erosion and clean advantages, it is bearing a wafer clip placed in and argon different electric field place, make argon atoms direct collision wafer, this is called "splash type etching" (sputter etch), "reverse splash plating" (reverse sputter), or "ion grinding" (ion milling). This process will wafer surface contaminants and wafer surface of a layer of film to eliminate. FAG pollution has been removed from the bearing can make exposed wafer area and sedimentary film electrical contact between the effect increased, and improve the membrane surface defect of crystal round remaining sex.

In 2 extremely type electric dipole in splash plating, on wafer surface or the nearby have many reaction. When argon atom movement, will produce many electronic, these electronic will make base material (refers to the wafer) heated, temperature, this will make the sedimentary film not even, INA bearing at the same time these electronic also causes a kind of radiation environment, can damage some sensitive components.

When deposits are aluminum, 2 extremely type electric dipole with the electronic heat will plating cause serious problems, because of heat will make target materials and cavity the remnants of oxygen and aluminum indoor combined form two al2o3, and aluminum oxide is dielectric material, can reduce the deposition of the conductive properties of aluminum. More seriously, target board surface may form a layer of alumina, makes the impact of argon atom (in 2 extremely type electric dipole in splash plating) enough energy for this layer throughout, killing target materials were blocked live, and makes splash plating interrupt.

Three type electric dipole (triode) splash plating method to avoid some 2 extremely type. Argon ionized electronics to will be in a separate high current heating wire to produce, and the position is in the sedimentary chamber besides, TIMKEN bearing so wafer won't be electronic arise radiation from the damage. With three very type method of the membrane of the sedimentary higher density.

Electric dipole type with another plating problem is electronic escape to chamber, and does not participate in sedimentary need set up plasma field. This kind of situation is "magnetoelectricity" (magnetron) type splash plating system to try to solve. In this system, target board and magnetic field around behind plus (figure 17), the magnetic field will electronic capture (limit) in the front of the target board. In the deposition rate increase situations, the magnetoelectric type system efficiency is higher. The magnetoelectric type caused by ion flow (impact of target material argon ion density) than the traditional 2 extremely type electric dipole splash plating most times. Another effect it is because of the chamber to the lower pressure so sedimentary film more clean (not easy to generate pseudo leak). Because of the magnetoelectric type splash plating target materials of low temperature reason often be used to splash coating aluminum and aluminum alloy.

 
Mass production level with splashes of a number of different design system, NTN bearing chamber has batch type system or single piece of wafer of the continuous different design. Most of the volume production machine have loaded-atresia (load-lock) ability. The so-called loading-closure device is refers to the part of the vacuum (refers to the vacuum degree is not high) the front end of the chamber (antechamber), so can with chamber in sedimentary maintain vacuum state, its advantage is to make high output. Mass production machine used in sedimentary one or two kind of target materials, but the study used machine is able to use a variety of different target materia


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